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ZXMN0545G4
450V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA
DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. FEATURES
* High voltage * Low on-resistance * Fast switching speed * Low gate drive * Low threshold * SOT223 package variant engineered to increase spacing between
high voltage pins
SOT223
APPLICATIONS
* Off-line power supply start-up circuitry
ORDERING INFORMATION
DEVICE ZXMN0545G4TA ZXMN0545G4TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1,000 units 4,000 units
N/C
DEVICE MARKING
ZXMN 0545
PINOUT - TOP VIEW
ISSUE 1 - JANUARY 2006 1
ZXMN0545G4
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS =10V; Tamb =25C) Pulsed Drain Current
(c) (a)
SYMBOL V DS V GS ID I DM IS I SM P tot
VALUE 450 20 140 600 140 600 2.0 1.6
UNIT V V mA mA A A W mW/C
Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T amb =25C (a) Linear derating factor
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 62.5 32 UNIT C/W C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - JANUARY 2006 2
ZXMN0545G4
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) Static Drain-Source On-State Resistance (1) SYMBOL BV DSS V GS(th) I GSS I DSS MIN. 450 1 3 20 10 400 150 50 100 70 10 4 7 7 16 10 MAX. UNIT V V nA A A mA mS pF pF pF ns ns ns ns V DD =25V, I D =100mA V DS =25V, V GS =0V, f=1MHz CONDITIONS I D =1mA, V GS =0V I =1mA, V DS = V GS D V GS = 20V, V DS =0V
V DS =450 V, V GS =0V V DS =405 V, V GS =0V, T=125C (2) V DS =25 V, V GS =10V V GS =10V, I D =100mA V DS =25V, I D =100mA
I D(on) R DS(on)
Forward Transconductance (1)(2) g fs Input Capacitance
(2)
C iss C oss C rss t d(on) tr
(2)(3)
Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time Rise Time
(2)(3) (2)(3)
Turn-Off Delay Time Fall Time
(2)(3)
t d(off) tf
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
ISSUE 1 - JANUARY 2006 3
ZXMN0545G4
TYPICAL CHARACTERISTICS
ID(On) On-State Drain Current (mA)
800 700 600 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 3V 4V VGS= 10V 8V 6V 5V 400 VGS= 10V 6V 5V 4V
ID(On)Drain Current (mA)
300
200
100 3V 0 0 4 8 12 16 20
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output characteristics
Saturation characteristics
VDS-Drain Source Voltage (Volts)
20
500
ID(On) Drain Current (mA)
16 ID= 250mA
400
VDS= 25V
12
300
8
200
4
100mA 50mA 2 4 6 8 10
100 0 0 1 2 3 4 5 6 7 8 9 10
0
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Voltage saturation characteristics
RDS(ON) -Drain Source Resistance ( )
2.4
Transfer characteristics
Normalised RDS(on) and VGS(th)
100 90 80 70 60 50 40 30 20 ID= 250mA 100mA 50mA
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
ce ur So nai Dr e nc ta is es R
RD
) on S(
VGS=10V ID=0.1A
VGS=VDS ID=1mA
Gate T hre
shold V oltage V GS(t
h)
10 1 2 3 4 5 6 7 8 9 10 20
0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS-Gate Source Voltage (Volts)
Tj-Junction Temperature (C )
On-resistance vs gate-source voltage
Normalised RDS(on) and VGS(th) temperature
ISSUE 1 - JANUARY 2006 4
ZXMN0545G4
TYPICAL CHARACTERISTICS
ISSUE 1 - JANUARY 2006 5
ZXMN0545G4
PACKAGE OUTLINE PAD LAYOUT DETAILS
3.8 0.15 2.0 0.079
6.3 0.248
2.0 0.079 1.5 0.059
mm inches
2.3 0.091
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches
(c) Zetex Semiconductors plc 2006
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JANUARY 2006 6

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